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Abstract Over the past decade, topological insulators have received enormous attention for their potential in energy‐efficient spin‐to‐charge conversion, enabled by strong spin‐orbit coupling and spin‐momentum locked surface states. Despite extensive research, the spin‐to‐charge conversion efficiency, usually characterized by the spin Hall angle (θSH), remains relatively low at room temperature. In this work, pulsed laser deposition is employed to fabricate high‐quality ternary topological insulator (Bi0.1Sb0.9)2Te3thin films on magnetic insulator Y3Fe5O12. It is found that the value ofθSHreaches ≈0.76 at room temperature and increases to ≈0.9 as the Fermi level is tuned to cross topological surface states via electrical gating. These findings provide an innovative approach to tailoring the spin‐to‐charge conversion in topological insulators and pave the way for their applications in energy‐efficient spintronic devices.more » « lessFree, publicly-accessible full text available March 3, 2026
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